After over thirteen years of continuous innovation and the successful launch of the first generation of semiconductor modules integrating silicon carbide (SiC) chips, Mitsubishi reached a new milestone in the summer of 2023. The company unveiled the second generation of its SiC semiconductor module, named the Nx-Type Full-SiC, marking a significant advancement in the field of power electronics.
Mitsubishi's work on the Nx-Type Full-SiC module focused on reducing power losses and optimizing the electrode structure. The latter is now equipped with layered electrodes, reducing internal inductance to just 9nH - a significant 47% reduction compared to the previous module. This technological breakthrough eliminates overvoltages and safeguards the entire system while enabling faster switching. As a result, both switching and power losses are also reduced.
One of the key features of this second generation is the integration of a low-loss SiC chip, utilizing the junction field-effect transistor (JFET) doping technology. This technique, increasing impurity density in the JFET region, enhances device density. The result is a substantial reduction in power loss, around 72%, making the module significantly more efficient. This decrease in power loss also has a beneficial impact on thermal management, allowing for the use of more compact and lightweight cooling systems.
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