After over thirteen years of continuous innovation and the successful launch of the first generation of semiconductor modules integrating silicon carbide (SiC) chips, Mitsubishi reached a new milestone in the summer of 2023. The company unveiled the second generation of its SiC semiconductor module, named the Nx-Type Full-SiC, marking a significant advancement in the field of power electronics.
Mitsubishi's work on the Nx-Type Full-SiC module focused on reducing power losses and optimizing the electrode structure. The latter is now equipped with layered electrodes, reducing internal inductance to just 9nH - a significant 47% reduction compared to the previous module. This technological breakthrough eliminates overvoltages and safeguards the entire system while enabling faster switching. As a result, both switching and power losses are also reduced.
One of the key features of this second generation is the integration of a low-loss SiC chip, utilizing the junction field-effect transistor (JFET) doping technology. This technique, increasing impurity density in the JFET region, enhances device density. The result is a substantial reduction in power loss, around 72%, making the module significantly more efficient. This decrease in power loss also has a beneficial impact on thermal management, allowing for the use of more compact and lightweight cooling systems.
FOR MORE INFORMATION
For any questions, contact ARCEL HERE. Our engineers will be happy to inform you about the Nx-Type Full-SiC module.
(761) (1)
Whatsapp
